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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors MJE2955T DESCRIPTION With TO-220 package Complement to type MJE3055T DC current gain -hFE = 20-70 @ IC = -4 Adc Collector-emitter saturation voltage VCE(sat) = -1.1 Vdc (Max) @ IC =- 4 Adc APPLICATIONS Designed for general-purpose switching and amplifier applications. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-220) and symbol INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base TC=25ae OND IC CONDITIONS TOR UC VALUE -70 -60 -5 -10 -6 75 150 -55~150 UNIT V V V A A W ae ae Open emitter Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.67 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-0.2A ;IB=0 IC=-4A ;IB=-0.4A IC=-10A ;IB=-3.3A IC=-4A ; VCE=-4V VCE=-30V; IB=0 VCE=-70V; VBE(off)=-1.5V TC=150ae VCB=-70V; IE=0 TC=150ae VEB=-5V; IC=0 IC=-4A ; VCE=-4V MIN -60 MJE2955T SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -1.1 -8.0 -1.8 -0.7 -1.0 -5.0 -1.0 -10 V V V mA mA mA mA DC current gain CHA IN Transition frequency E SEM NG IC=-10A ; VCE=-4V IC=-0.5A ; VCE=-10V OND IC 20 5.0 TOR UC 100 -5.0 2.0 MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE MJE2955T CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
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